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	<id>http://wiki.dcae.pub.ro/index.php?action=history&amp;feed=atom&amp;title=Power_Semiconductor_Devices</id>
	<title>Power Semiconductor Devices - Revizia istoricului</title>
	<link rel="self" type="application/atom+xml" href="http://wiki.dcae.pub.ro/index.php?action=history&amp;feed=atom&amp;title=Power_Semiconductor_Devices"/>
	<link rel="alternate" type="text/html" href="http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;action=history"/>
	<updated>2026-05-27T07:10:33Z</updated>
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	<entry>
		<id>http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=6247&amp;oldid=prev</id>
		<title>Mcristea: actualizare site</title>
		<link rel="alternate" type="text/html" href="http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=6247&amp;oldid=prev"/>
		<updated>2018-11-01T12:05:17Z</updated>

		<summary type="html">&lt;p&gt;actualizare site&lt;/p&gt;
&lt;table class=&quot;diff diff-contentalign-left diff-editfont-monospace&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;ro&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Versiunea anterioară&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Versiunea de la data 1 noiembrie 2018 12:05&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l15&quot; &gt;Linia 15:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Linia 15:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The SIT/MOS cascode.&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The SIT/MOS cascode.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Website: &lt;del class=&quot;diffchange diffchange-inline&quot;&gt;http&lt;/del&gt;://&lt;del class=&quot;diffchange diffchange-inline&quot;&gt;arh&lt;/del&gt;.&lt;del class=&quot;diffchange diffchange-inline&quot;&gt;pub&lt;/del&gt;.&lt;del class=&quot;diffchange diffchange-inline&quot;&gt;ro&lt;/del&gt;/&lt;del class=&quot;diffchange diffchange-inline&quot;&gt;mcristea&lt;/del&gt;/&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Website: &lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;https&lt;/ins&gt;://&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;sites&lt;/ins&gt;.&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;google&lt;/ins&gt;.&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;com&lt;/ins&gt;/&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;site&lt;/ins&gt;/&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;mironcristea/course&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mcristea</name></author>
	</entry>
	<entry>
		<id>http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=4265&amp;oldid=prev</id>
		<title>Mcristea la 13 ianuarie 2016 08:57</title>
		<link rel="alternate" type="text/html" href="http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=4265&amp;oldid=prev"/>
		<updated>2016-01-13T08:57:57Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table class=&quot;diff diff-contentalign-left diff-editfont-monospace&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;ro&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Versiunea anterioară&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Versiunea de la data 13 ianuarie 2016 08:57&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l13&quot; &gt;Linia 13:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Linia 13:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Bipolar and merged power devices:&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Bipolar and merged power devices:&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The &lt;del class=&quot;diffchange diffchange-inline&quot;&gt;ESBT&lt;/del&gt;.&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The &lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;SIT/MOS cascode&lt;/ins&gt;.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Website: http://&lt;del class=&quot;diffchange diffchange-inline&quot;&gt;dcae&lt;/del&gt;.pub.ro/mcristea/&lt;del class=&quot;diffchange diffchange-inline&quot;&gt;mcris.htm&lt;/del&gt;&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Website: http://&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;arh&lt;/ins&gt;.pub.ro/mcristea/&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mcristea</name></author>
	</entry>
	<entry>
		<id>http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=2023&amp;oldid=prev</id>
		<title>Mcristea la 28 martie 2014 05:24</title>
		<link rel="alternate" type="text/html" href="http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=2023&amp;oldid=prev"/>
		<updated>2014-03-28T05:24:04Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table class=&quot;diff diff-contentalign-left diff-editfont-monospace&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;ro&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Versiunea anterioară&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Versiunea de la data 28 martie 2014 05:24&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l14&quot; &gt;Linia 14:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Linia 14:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The ESBT.&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The ESBT.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td colspan=&quot;2&quot;&gt; &lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td colspan=&quot;2&quot;&gt; &lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;ins style=&quot;font-weight: bold; text-decoration: none;&quot;&gt;Website: http://dcae.pub.ro/mcristea/mcris.htm&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mcristea</name></author>
	</entry>
	<entry>
		<id>http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=2017&amp;oldid=prev</id>
		<title>Mcristea la 27 martie 2014 19:28</title>
		<link rel="alternate" type="text/html" href="http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=2017&amp;oldid=prev"/>
		<updated>2014-03-27T19:28:05Z</updated>

		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table class=&quot;diff diff-contentalign-left diff-editfont-monospace&quot; data-mw=&quot;interface&quot;&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;col class=&quot;diff-marker&quot; /&gt;
				&lt;col class=&quot;diff-content&quot; /&gt;
				&lt;tr class=&quot;diff-title&quot; lang=&quot;ro&quot;&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;← Versiunea anterioară&lt;/td&gt;
				&lt;td colspan=&quot;2&quot; style=&quot;background-color: #fff; color: #202122; text-align: center;&quot;&gt;Versiunea de la data 27 martie 2014 19:28&lt;/td&gt;
				&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot; id=&quot;mw-diff-left-l1&quot; &gt;Linia 1:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Linia 1:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Course Information                                &lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;&amp;#039;&amp;#039;&amp;#039;&lt;/ins&gt;Course Information&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;&amp;#039;&amp;#039;&amp;#039; &lt;/ins&gt;                               &lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Particularities of power semiconductor devices&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Particularities of power semiconductor devices&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;:&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;.&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Unipolar power devices&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Unipolar power devices&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;:&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Bipolar and merged power devices&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;* Bipolar and merged power devices&lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;:&lt;/ins&gt;&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt; &lt;/td&gt;&lt;td style=&quot;background-color: #f8f9fa; color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #eaecf0; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class=&#039;diff-marker&#039;&gt;−&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The thyristors. The IGBT. The ESBT.&lt;/div&gt;&lt;/td&gt;&lt;td class=&#039;diff-marker&#039;&gt;+&lt;/td&gt;&lt;td style=&quot;color: #202122; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;&quot;&gt;&lt;div&gt;Power diodes. Power LEDs. Solar cells. The power bipolar &lt;ins class=&quot;diffchange diffchange-inline&quot;&gt;transistor. The monolithic Darlington &lt;/ins&gt;transistor. The thyristors. The IGBT. The ESBT.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Mcristea</name></author>
	</entry>
	<entry>
		<id>http://wiki.dcae.pub.ro/index.php?title=Power_Semiconductor_Devices&amp;diff=2016&amp;oldid=prev</id>
		<title>Mcristea: Pagină nouă: Course Information                                 * Particularities of power semiconductor devices  Semiconductors at high injection levels - high injection level vs. low injection l...</title>
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		<updated>2014-03-27T19:26:29Z</updated>

		<summary type="html">&lt;p&gt;Pagină nouă: Course Information                                 * Particularities of power semiconductor devices  Semiconductors at high injection levels - high injection level vs. low injection l...&lt;/p&gt;
&lt;p&gt;&lt;b&gt;Pagină nouă&lt;/b&gt;&lt;/p&gt;&lt;div&gt;Course Information                               &lt;br /&gt;
&lt;br /&gt;
* Particularities of power semiconductor devices&lt;br /&gt;
&lt;br /&gt;
Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.&lt;br /&gt;
&lt;br /&gt;
Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices&lt;br /&gt;
&lt;br /&gt;
* Unipolar power devices&lt;br /&gt;
&lt;br /&gt;
The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.&lt;br /&gt;
&lt;br /&gt;
* Bipolar and merged power devices&lt;br /&gt;
&lt;br /&gt;
Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The thyristors. The IGBT. The ESBT.&lt;/div&gt;</summary>
		<author><name>Mcristea</name></author>
	</entry>
</feed>