Diferență între revizuiri ale paginii „Lidia Dobrescu”
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=== Electronic Devices === | === Electronic Devices === | ||
− | === Electronic Devices and | + | * [http://arh.pub.ro/ldobrescu/curs%201-3poz.doc Lecture 1 - 3] |
+ | * [http://arh.pub.ro/ldobrescu/jonc1.ppt Lecture 4] | ||
+ | * [http://arh.pub.ro/ldobrescu/jonc2.ppt Lecture 5] | ||
+ | * [http://arh.pub.ro/ldobrescu/jonc3.ppt Lecture 6] | ||
+ | * [http://arh.pub.ro/ldobrescu/tbpoz.doc Lecture 7 & 8] | ||
+ | * [http://arh.pub.ro/ldobrescu/mos1poz.doc Lecture 10] | ||
+ | * [http://arh.pub.ro/ldobrescu/mos2poz.doc Lecture 11] | ||
+ | * [http://arh.pub.ro/ldobrescu/tecjpoz2.doc Lecture 12] | ||
+ | |||
+ | ==== Practice ==== | ||
+ | |||
+ | * [http://arh.pub.ro/ldobrescu/tbpoz.doc Bipolar Transistor Practice Problem] | ||
+ | * [http://arh.pub.ro/ldobrescu/pmos.doc MOS Transistor Practice Problem] | ||
+ | * [http://arh.pub.ro/ldobrescu/tecjpoz.doc TEC-J Transistor Practice Problem] | ||
+ | |||
+ | === Electronic Devices and Modelling === | ||
+ | |||
+ | * [http://arh.pub.ro/ldobrescu/MCMA.rar Course materials] | ||
+ | * [http://arh.pub.ro/ldobrescu/luc1.doc Lab 1] | ||
+ | * [http://arh.pub.ro/ldobrescu/luc2.doc Lab 2 - bipolar transistor] | ||
+ | ** [http://arh.pub.ro/ldobrescu/Dioda_Bipolar-fb8fe.zip Catalog information for lab 1 and 2] | ||
+ | * [http://arh.pub.ro/ldobrescu/tecj.pdf Lab 3 - TEC-J Transistor] | ||
+ | * [http://arh.pub.ro/ldobrescu/mos.pdf Lab 4 - MOS Transistor] | ||
+ | * [http://arh.pub.ro/ldobrescu/Parts.zip PARTS program download] | ||
+ | * [http://arh.pub.ro/ldobrescu/extr.zip EXTR program download] | ||
== Research == | == Research == |
Versiunea curentă din 19 decembrie 2014 13:38
- Phone: +4021 402 48 40 (office), +4074 829 82 75,
- E-mail: lidia.dobrescu@electronica.pub.ro
- Current position: Associated Professor with DCAE department in Faculty of Electronics, Telecommunications & Information Technology, Politehnica University of Bucharest, ROMANIA
- Room: B108
- Curriculum Vitae: Media:cvlidiaeuropass.pdf
Timetable
Teaching
Computer Programming
Electronic Devices
Practice
- Bipolar Transistor Practice Problem
- MOS Transistor Practice Problem
- TEC-J Transistor Practice Problem
Electronic Devices and Modelling
- Course materials
- Lab 1
- Lab 2 - bipolar transistor
- Lab 3 - TEC-J Transistor
- Lab 4 - MOS Transistor
- PARTS program download
- EXTR program download
Research
- L. Dobrescu, (director), UPB coordonator, "New Innovative System for Radiation Safety of Patients Investigated by Radiological Imaging Methods, based on Smart Cards and PKI Infrastructures-SRSPIRIM ", 2012-2016, Proiect de Cercetare Aplicativa Tip II
- L. Dobrescu, (director) "Structuri Superpantă pentru Tehnologii Nanometrice", Grant al Academiei Romane, Nr. 154/2005, 2005.
- A. Rusu (director contract), L. Dobrescu în colectiv, “Modele avansate pentru tranzistoare bipolare şi MOS în tehnologii submicronice”, contract 12614, tema C35, Banca Mondiala, CNCSIS-UPB, 1999 - 2002
- Pi2. A. Rusu (director contract), L. Dobrescu în colectiv, “Dispozitive, Circuite şi Microsisteme Electronice”, contract 46182, tema D107, Banca Mondiala, CNCSIS-UPB, Bucureşti, 1998 - 2001
Publications
- L. Dobrescu, S.Stanciu, A. Ropot, "Radiation safety of the Pacients Investigated by Radiological Imaging Methods" International Journal of Monitoring and Surveillance Technologies Research, Oct-Dec 2013, Vol.1, Nr4 , DOI 10.4018/IJMSTR, ISSN 2166-7241, EISSN 2166-725X, FI 2010 0.28
- Dobrescu, R.V. Caramaliu, S.Stanciu, "Syncope Detection Electronic System" The 4-th IEEE International Conference on E-Health and Bioengineering, EHB- 2013, Iasi, Romania, 21-23 Nov. 2013
- Alexandru Rusu, L. Dobrescu, M.Enachescu, A.Rusu, C.Burileanu "Common Anode Amplifier of a Commercial MOS Transistor In Avalanche Gated Diode Configuration", 2012, Proceedings of the 35-th International Semiconductor Conference, CAS’2012, Sinaia, Romania, vol.2 , pg. 403-406, WOS:000314223700082
- M.Craciun, A.Rusu, D.Bogdan, L.Dobrescu, "MOS Saturation Model based on Channel resistance," 2011, Proceedings of the 34-th International Semiconductor Conference, CAS’2011, Sinaia, Romania, vol.2 , pg. 373-376, WOS:000320322000085