Diferență între revizuiri ale paginii „Power Semiconductor Devices”
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| − | Course Information | + | '''Course Information''' |
| − | * Particularities of power semiconductor devices | + | * Particularities of power semiconductor devices: |
Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels. | Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels. | ||
| − | Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices | + | Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices. |
| − | * Unipolar power devices | + | * Unipolar power devices: |
The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT. | The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT. | ||
| − | * Bipolar and merged power devices | + | * Bipolar and merged power devices: |
| − | Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The thyristors. The IGBT. The ESBT. | + | Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The ESBT. |
Versiunea de la data 27 martie 2014 19:28
Course Information
- Particularities of power semiconductor devices:
Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.
Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices.
- Unipolar power devices:
The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.
- Bipolar and merged power devices:
Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The ESBT.
