Diferență între revizuiri ale paginii „Lidia Dobrescu”
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− | "L. Dobrescu, S.Stanciu, A. Ropot, "" Radiation safety of the Pacients Investigated by Radiological Imaging Methods"" International Journal of Monitoring and Surveillance Technologies Research, Oct-Dec 2013, Vol.1, Nr4 , DOI 10.4018/IJMSTR, ISSN 2166-7241, EISSN 2166-725X, FI 2010 0.28 | + | "L. Dobrescu, S.Stanciu, A. Ropot, "" Radiation safety of the Pacients Investigated by Radiological Imaging Methods"" International Journal of Monitoring and Surveillance Technologies Research, Oct-Dec 2013, Vol.1, Nr4 , DOI 10.4018/IJMSTR, ISSN 2166-7241, EISSN 2166-725X, FI 2010 0.28" |
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Alexandru Rusu, L. Dobrescu, M.Enachescu, A.Rusu, C.Burileanu " Common Anode Amplifier of a Commercial MOS Transistor In Avalanche Gated Diode Configuration", 2012, Proceedings of the 35-th International Semiconductor Conference, CAS’2012, Sinaia, Romania, vol.2 , pg. 403-406, WOS:000314223700082 | Alexandru Rusu, L. Dobrescu, M.Enachescu, A.Rusu, C.Burileanu " Common Anode Amplifier of a Commercial MOS Transistor In Avalanche Gated Diode Configuration", 2012, Proceedings of the 35-th International Semiconductor Conference, CAS’2012, Sinaia, Romania, vol.2 , pg. 403-406, WOS:000314223700082 | ||
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== PUBLICATIONS == | == PUBLICATIONS == |
Versiunea de la data 14 martie 2014 13:16
Associated Professor
Department DCAE
Faculty of Electronics, Telecommunications & Information Technology
Politehnica University of Bucharest, ROMANIA
Email: lidia.dobrescu@electronica.pub.ro
Phone: +4021 402 48 40 (office), +40748 298275
TEACHING
COMPUTER PROGRAMMING
ELECTRONIC DEVICES
ELECTRONIC DEVICES AND MODELLING
CV
RESEARCH
"L. Dobrescu, S.Stanciu, A. Ropot, "" Radiation safety of the Pacients Investigated by Radiological Imaging Methods"" International Journal of Monitoring and Surveillance Technologies Research, Oct-Dec 2013, Vol.1, Nr4 , DOI 10.4018/IJMSTR, ISSN 2166-7241, EISSN 2166-725X, FI 2010 0.28"
Alexandru Rusu, L. Dobrescu, M.Enachescu, A.Rusu, C.Burileanu " Common Anode Amplifier of a Commercial MOS Transistor In Avalanche Gated Diode Configuration", 2012, Proceedings of the 35-th International Semiconductor Conference, CAS’2012, Sinaia, Romania, vol.2 , pg. 403-406, WOS:000314223700082