Lidia Dobrescu
Associated Professor
Department DCAE
Faculty of Electronics, Telecommunications & Information Technology
Politehnica University of Bucharest, ROMANIA
Email: lidia.dobrescu@electronica.pub.ro
Phone: +4021 402 48 40 (office), +40748 298275
TEACHING
COMPUTER PROGRAMMING
ELECTRONIC DEVICES
ELECTRONIC DEVICES AND MODELLING
CV
RESEARCH
l. L. Dobrescu, (director), UPB coordonator, "New Innovative System for Radiation Safety of Patients Investigated by Radiological Imaging Methods, based on Smart Cards and PKI Infrastructures-SRSPIRIM ",2012-2016, Proiect de Cercetare Aplicativ, PN II 2. L. Dobrescu, (director) "Structuri Superpantă pentru Tehnologii Nanometrice", Grant al Academiei Romane, Nr. 154/2005, 2005. 3.A. Rusu (director contract), L. Dobrescu în colectiv, “Modele avansate pentru tranzistoare bipolare şi MOS în tehnologii submicronice”, contract 12614, tema C35, Banca Mondiala, CNCSIS-UPB, 1999 - 2002 4.Pi2. A. Rusu (director contract), L. Dobrescu în colectiv, “Dispozitive, Circuite şi Microsisteme Electronice”, contract 46182, tema D107, Banca Mondiala, CNCSIS-UPB, Bucureşti, 1998 - 2001
PUBLICATIONS
"L. Dobrescu, S.Stanciu, A. Ropot, "" Radiation safety of the Pacients Investigated by Radiological Imaging Methods"" International Journal of Monitoring and Surveillance Technologies Research, Oct-Dec 2013, Vol.1, Nr4 , DOI 10.4018/IJMSTR, ISSN 2166-7241, EISSN 2166-725X, FI 2010 0.28"
" Dobrescu, R.V. Caramaliu, S.Stanciu, ""Syncope Detection Electronic System"" The 4-th IEEE International Conference on E-Health and Bioengineering, EHB- 2013, Iasi, Romania, 21-23 Nov. 2013"
Alexandru Rusu, L. Dobrescu, M.Enachescu, A.Rusu, C.Burileanu " Common Anode Amplifier of a Commercial MOS Transistor In Avalanche Gated Diode Configuration", 2012, Proceedings of the 35-th International Semiconductor Conference, CAS’2012, Sinaia, Romania, vol.2 , pg. 403-406, WOS:000314223700082
M.Craciun, A.Rusu, D.Bogdan, L.Dobrescu, "MOS Saturation Model based on Channel resistance," 2011, Proceedings of the 34-th International Semiconductor Conference, CAS’2011, Sinaia, Romania, vol.2 , pg. 373-376, WOS:000320322000085
