Power Semiconductor Devices: Diferență între versiuni
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Course Information | '''Course Information''' | ||
* Particularities of power semiconductor devices | * Particularities of power semiconductor devices: | ||
Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels. | Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels. | ||
Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices | Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices. | ||
* Unipolar power devices | * Unipolar power devices: | ||
The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT. | The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT. | ||
* Bipolar and merged power devices | * Bipolar and merged power devices: | ||
Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The thyristors. The IGBT. The ESBT. | Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The ESBT. | ||
Versiunea de la data 27 martie 2014 19:28
Course Information
- Particularities of power semiconductor devices:
Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.
Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices.
- Unipolar power devices:
The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.
- Bipolar and merged power devices:
Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The ESBT.
