Power Semiconductor Devices: Diferență între versiuni
De la WikiLabs
Jump to navigationJump to search
Fără descriere a modificării |
Fără descriere a modificării |
||
| Linia 13: | Linia 13: | ||
* Bipolar and merged power devices: | * Bipolar and merged power devices: | ||
Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The | Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The SIT/MOS cascode. | ||
Website: http:// | Website: http://arh.pub.ro/mcristea/ | ||
Versiunea de la data 13 ianuarie 2016 08:57
Course Information
- Particularities of power semiconductor devices:
Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.
Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices.
- Unipolar power devices:
The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.
- Bipolar and merged power devices:
Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The SIT/MOS cascode.
Website: http://arh.pub.ro/mcristea/
