Power Semiconductor Devices

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Versiunea din 1 noiembrie 2018 12:05, autor: Mcristea (discuție | contribuții) (actualizare site)
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Course Information

  • Particularities of power semiconductor devices:

Semiconductors at high injection levels - high injection level vs. low injection level. The p-n junction characteristics at high injection levels.

Junction terminations for high-voltage capability. Thermal operation of power semiconductor devices.

  • Unipolar power devices:

The power Schottky diode. The MOS power transistor. The power static-induction transistor SIT.

  • Bipolar and merged power devices:

Power diodes. Power LEDs. Solar cells. The power bipolar transistor. The monolithic Darlington transistor. The thyristors. The IGBT. The SIT/MOS cascode.

Website: https://sites.google.com/site/mironcristea/course